In particular, the important device technologies in mainstream microelectronics of the SiGe heterostructure bipolar transistor (HBT) and strained-Si CMOS will be reviewed before future device and optoelectronics concepts are explored.read more read lessĪbstract: The silicon-germanium heterojunction bipolar transistor (SiGe HBT) is the first practical bandgap-engineered device to be realized in silicon. This paper presents a review of the material properties, growth techniques, band structure and the main electronic devices of the Si/SiGe heterostructure system. It is the development of Si/SiGe heterostructures which has enabled band structure and strain engineering allowing Si/SiGe to be used in many different ways to improve conventional microelectronic device performance along with allowing new concepts to be explored. This percentage is predicted to increase substantially as SiGe begins to be used in complementary metal oxide semiconductor (CMOS) technology in the future to substantially improve performance. read more read lessĪbstract: Silicon germanium (SiGe) has moved from being a research material to accounting for a small but significant percentage of manufactured semiconductor devices. The promising features of quarternaries and double heterostructures in relation to possible current injection lasers, LED's, and photodetectors are also elaborated on. Recent progress in processing such as formation of low-resistance ohmic contacts and etching is also presented. After a short elucidation of materials characteristics of the nitrides, we explore their electrical transport properties in detail. We discuss the electrical properties of these devices and their drawbacks followed by future prospects. Recent successes in p-doping of GaN and its alloys with InN and AlN, and in n-doping with much reduced background concentrations have paved the way for the design, fabrication, and characterization of devices such as MESFET's, MISFET's, HBT's, LED's, and optically pumped lasers. ![]() ![]() In this review, the status and future prospects of emerging wide bandgap gallium nitride semiconductor devices are discussed. Recent introduction of commercial blue and blue-green LED's have led to a plethora of activity in all three continents into the heterostructures based on GaN and its alloys with AlN and InN. Abstract: Wide bandgap GaN has long been sought for its applications to blue and UV emitters and high temperature/high power electronic devices.
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